Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes

doi:10.1109/TNS.2018.2872582

	Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes
	Liu, Ningyang; Wang, Lei; Song LG(宋力刚); Cao XZ(曹兴忠); Wang BY(王宝义); Song, Ligang; Li, Bo; Liu, Yanqiu; Cui, Yan; Li, Binhong
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2018
卷号	65 期号:11 页码:2784-2792
关键词	Atom displacement carrier removal effect carrier ultrafast dynamics GaN indium localization light-emitting diodes (LEDs) nonradiative recombination centers (NRCs) positron annihilation spectroscopy (PAS) silicon ion irradiation strain relaxation
ISSN号	0018-9499
DOI	10.1109/TNS.2018.2872582
文献子类	Article
英文摘要	High-resolution X-ray diffraction, temperature-dependent photoluminescence (PL), time-resolved P1, and positron annihilation spectroscopy are employed to investigate the degradation mechanism of InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) under silicon ion irradiation. Reduction of the quantum-confined Stark effect due to crystalline strain relaxation, enhancement of indium localization due to thermal spike, generation of nonradiative recombination centers (NRCs), and carrier removal effect due to atom displacement are revealed to he critical factors in LEDs postirradiation performance. New NRCs are proven to be the main reason for the degradation of the internal quantum efficiency of MQWs. The increase of the threshold voltage and leakage current in LEDs are caused by the carrier removal effect and new defects in bandgap induced by radiation. In addition, new NRCs are found to appear earlier than indium localization and carrier removal effect with increasing silicon ion fluence. Atom displacement defects are revealed to be located mainly in p-type GaN and MQWs layers. Radiation-induced nitrogen vacancies are considered compensation donors in p-type GaN, whereas all other nitrogen and gallium-related defects are NRCs in MQWs.
电子版国际标准刊号	1558-1578
WOS关键词	PROTON-IRRADIATION ; NEUTRON-IRRADIATION ; THIN-FILMS ; GAN ; DEFECTS ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; LOCALIZATION ; EFFICIENCY ; BAND
WOS研究方向	Engineering ; Nuclear Science & Technology
语种	英语
WOS记录号	WOS:000450189800004
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286951]
专题	高能物理研究所_加速器中心高能物理研究所_实验物理中心高能物理研究所_多学科研究中心
通讯作者	Cao XZ(曹兴忠)
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Liu, Ningyang,Wang, Lei,Song LG,et al. Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2018,65(11):2784-2792.
APA	Liu, Ningyang.,Wang, Lei.,宋力刚.,曹兴忠.,王宝义.,...&Han, Zhengsheng.(2018).Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,65(11),2784-2792.
MLA	Liu, Ningyang,et al."Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 65.11(2018):2784-2792.