Performance evaluation of an SOI pixel sensor with in-pixel binary counters

doi:10.1007/s41605-018-0043-5

	Performance evaluation of an SOI pixel sensor with in-pixel binary counters
	Ou YQ(欧阳群); Ouyang, Qun; Song LL(宋龙龙); Lu YP(卢云鹏); Zhou Y(周扬); Wu ZG(吴志岗); Song, Longlong, Lu, Yunpeng, Hashimoto, Ryo, Nishimura, Ryutaro, Kishimoto, Shunji, Zhou, Yang, Wu, Zhigang, Arai, Yasuo
刊名	RADIATION DETECTION TECHNOLOGY AND METHODS
	2018
卷号	2018 期号: 1 页码: 12
ISSN号	2509-9930
DOI	10.1007/s41605-018-0043-5
文献子类	Article
英文摘要	Pixel detectors fabricated with the silicon-on-insulator (SOI) technology suffered from the digital pickup, due to the capacitive coupling between the sensing electrode and the in-pixel circuit. In order to tackle this issue, an advanced process called double SOI has been developed. A prototype chip CPIXTEG3b adopting this new process was designed and characterized. While optimization concerning the double-SOI design and testing of the single pixel were already presented in a separate publication, this paper focuses on its noise performance of the full matrix and X-ray detection utilizing a synchrotron photon beam.
电子版国际标准刊号	2509-9949
语种	英语
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286761]
专题	高能物理研究所_实验物理中心
通讯作者	Lu YP(卢云鹏)
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Ou YQ,Ouyang, Qun,Song LL,et al. Performance evaluation of an SOI pixel sensor with in-pixel binary counters[J]. RADIATION DETECTION TECHNOLOGY AND METHODS,2018,2018( 1): 12.
APA	欧阳群.,Ouyang, Qun.,宋龙龙.,卢云鹏.,周扬.,...&Song, Longlong, Lu, Yunpeng, Hashimoto, Ryo, Nishimura, Ryutaro, Kishimoto, Shunji, Zhou, Yang, Wu, Zhigang, Arai, Yasuo.(2018).Performance evaluation of an SOI pixel sensor with in-pixel binary counters.RADIATION DETECTION TECHNOLOGY AND METHODS,2018( 1), 12.
MLA	欧阳群,et al."Performance evaluation of an SOI pixel sensor with in-pixel binary counters".RADIATION DETECTION TECHNOLOGY AND METHODS 2018. 1(2018): 12.