New study for SiPMs performance in high electric field environment

doi:10.1007/978-981-13-1316-5_56

	New study for SiPMs performance in high electric field environment
	nEXO Collaboration
刊名	SPRINGER PROCEEDINGS IN PHYSICS
	2018
卷号	213 页码:299-303
ISSN号	0930-8989
DOI	10.1007/978-981-13-1316-5_56
文献子类	Proceedings Paper
英文摘要	We report on a new study for the performance of the Silicon Photo-Multipliers (SiPMs) light sensors when they are exposed to high electric field strengths in cryogenic environment. Three different SiPMs from two vendors (FBK and Hamamatsu) have been tested. The SiPMs showed very good stability, with respect to the gain and the crosstalk probability, when they are exposed to high electric fields compared to the case with the absence of the electric field. © Springer Nature Singapore Pte Ltd. 2018.
电子版国际标准刊号	1867-4941
会议地点	Beijing, China
语种	英语
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/286597]
专题	高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	nEXO Collaboration. New study for SiPMs performance in high electric field environment[J]. SPRINGER PROCEEDINGS IN PHYSICS,2018,213:299-303.
APA	nEXO Collaboration.(2018).New study for SiPMs performance in high electric field environment.SPRINGER PROCEEDINGS IN PHYSICS,213,299-303.
MLA	nEXO Collaboration."New study for SiPMs performance in high electric field environment".SPRINGER PROCEEDINGS IN PHYSICS 213(2018):299-303.