Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors

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	Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors
	Wang, Lifeng; Wu, Bin; Liu, Hongtao; Wang, Hanlin; Su, Yuyu; Lei, Weiwei; Hu, PingAn; Liu, Yunqi
刊名	SCIENCE CHINA-MATERIALS
	2019-08-01
卷号	62 期号:8 页码:1218-1225
ISSN号	2095-8226
DOI	10.1007/s40843-019-9419-0
语种	英语
WOS记录号	WOS:000470841800015
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/82713]
专题	中国科学院化学研究所
作者单位	Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Wang, Lifeng,Wu, Bin,Liu, Hongtao,et al. Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors[J]. SCIENCE CHINA-MATERIALS,2019,62(8):1218-1225.
APA	Wang, Lifeng.,Wu, Bin.,Liu, Hongtao.,Wang, Hanlin.,Su, Yuyu.,...&Liu, Yunqi.(2019).Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors.SCIENCE CHINA-MATERIALS,62(8),1218-1225.
MLA	Wang, Lifeng,et al."Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors".SCIENCE CHINA-MATERIALS 62.8(2019):1218-1225.