Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content

doi:10.1021/acs.jpclett.8b02416

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content
	Chen, Lei 2; Yang, Jinghai 2; Wang, Yaxin 2; Zhang, Yongjun 2; Guo, Shuang 2; Zhu, Aonan 2; Gao, Renxian 2; Ma, Ning 2; Han, Donglai 1; Zhang, Xin-Yuan 2,3,4
刊名	JOURNAL OF PHYSICAL CHEMISTRY LETTERS
	2018-10-18
卷号	9 期号:20 页码:6047-6051
ISSN号	1948-7185
DOI	10.1021/acs.jpclett.8b02416
通讯作者	Yang, Jinghai(jhyang1@jlnu.edu.cn) ; Chen, Lei(chenlei@jlnu.edu.cn)
英文摘要	We discuss how the controllable carrier influences the localized surface plasmon resonance (LSPR) and charge transfer (CT) in the same system based on ultraviolet-visible and surface-enhanced Raman scattering (SERS) measurements. The LSPR can be easily tuned from 580 to 743 nm by changing the sputtering power of Cu2S in the Ag and Cu2S composite substrate. During this process, surprisingly, we find that the LSPR is proportional to the sputtering power of Cu2S. This observation indicates that LSPR can be accurately adjusted by changing the content of the semiconductor, or even the carrier density. Moreover, we characterize the carrier density through the detection of the Hall effect to analyze the Raman shift caused by CT and obtain the relationships between them. These fundamental discussions provide a guideline for tunable LSPR and the investigation of CT.
资助项目	National Natural Science Foundation of China[61775081] ; National Natural Science Foundation of China[61575080] ; National Natural Science Foundation of China[61405072] ; Program for the development of Science and Technology of Jilin Province[20150519024JH]
WOS关键词	ENHANCED RAMAN-SCATTERING ; PHOTONIC MICROARRAY ; SERS ; NANOPARTICLES ; SPECTROSCOPY ; SYSTEM ; CATALYSIS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000448751700021
资助机构	National Natural Science Foundation of China ; Program for the development of Science and Technology of Jilin Province
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60440]
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Chen, Lei; Yang, Jinghai
作者单位	1.Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China 2.Jilin Normal Univ, Key Lab Funct Mat Phys & Chem, Minist Educ, Changchun 130103, Jilin, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China
推荐引用方式 GB/T 7714	Chen, Lei,Yang, Jinghai,Wang, Yaxin,et al. Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2018,9(20):6047-6051.
APA	Chen, Lei.,Yang, Jinghai.,Wang, Yaxin.,Zhang, Yongjun.,Guo, Shuang.,...&Zhang, Xin-Yuan.(2018).Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,9(20),6047-6051.
MLA	Chen, Lei,et al."Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 9.20(2018):6047-6051.