High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices

doi:10.1002/adma.201102975

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	High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices
	Jiang, Hui 1,2; Zhao, Huaping 2; Zhang, Keke K.1; Chen, Xiaodong 1; Kloc, Christian 1; Hu, Wenping 2
刊名	ADVANCED MATERIALS
	2011-11-16
卷号	23 期号:43 页码:5075-5080
ISSN号	0935-9648
DOI	10.1002/adma.201102975
语种	英语
出版者	WILEY-BLACKWELL
WOS记录号	WOS:000297042600014
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/71901]
专题	中国科学院化学研究所
通讯作者	Jiang, Hui
作者单位	1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,et al. High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices[J]. ADVANCED MATERIALS,2011,23(43):5075-5080.
APA	Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,Chen, Xiaodong,Kloc, Christian,&Hu, Wenping.(2011).High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices.ADVANCED MATERIALS,23(43),5075-5080.
MLA	Jiang, Hui,et al."High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices".ADVANCED MATERIALS 23.43(2011):5075-5080.