Surface transfer hole doping of epitaxial graphene using MoO3 thin film

doi:10.1063/1.3441263

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	Surface transfer hole doping of epitaxial graphene using MoO3 thin film
	Chen, Zhenyu 1,2; Santoso, Iman 1,3; Wang, Rui 4; Xie, Lan Fei 4; Mao, Hong Ying 1; Huang, Han 4; Wang, Yu Zhan 4; Gao, Xing Yu 1; Chen, Zhi Kuan 5; Ma, Dongge 2
刊名	APPLIED PHYSICS LETTERS
	2010-05-24
卷号	96 期号:21
ISSN号	0003-6951
DOI	10.1063/1.3441263
英文摘要	Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H-SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0x10(13) cm(-2), and places the Fermi level 0.38 eV below the graphene Dirac point. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3441263]
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000278183200057
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/69917]
专题	中国科学院化学研究所
通讯作者	Chen, Wei
作者单位	1.Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 3.Univ Gadjah Mada, Jurusan Fis, Yogyakarta, Indonesia 4.Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore 5.Inst Mat Res & Engn, Singapore 117602, Singapore
推荐引用方式 GB/T 7714	Chen, Zhenyu,Santoso, Iman,Wang, Rui,et al. Surface transfer hole doping of epitaxial graphene using MoO3 thin film[J]. APPLIED PHYSICS LETTERS,2010,96(21).
APA	Chen, Zhenyu.,Santoso, Iman.,Wang, Rui.,Xie, Lan Fei.,Mao, Hong Ying.,...&Chen, Wei.(2010).Surface transfer hole doping of epitaxial graphene using MoO3 thin film.APPLIED PHYSICS LETTERS,96(21).
MLA	Chen, Zhenyu,et al."Surface transfer hole doping of epitaxial graphene using MoO3 thin film".APPLIED PHYSICS LETTERS 96.21(2010).