Negative differential resistance behaviors in porphyrin molecular junctions modulated with side groups

doi:10.1063/1.2924364

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	Negative differential resistance behaviors in porphyrin molecular junctions modulated with side groups
	Long, Meng-Qiu 1; Chen, Ke-Qiu 1; Wang, Lingling 2; Qing, Wan 1; Zou, B. S.1; Shuai, Z.2
刊名	APPLIED PHYSICS LETTERS
	2008-06-16
卷号	92 期号:24
ISSN号	0003-6951
DOI	10.1063/1.2924364
英文摘要	By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic transport properties of molecular junctions constructed by the porphyrin molecule with donor or acceptor side groups. The results show that the side groups play important role on the electron transport properties. Negative differential resistance (NDR) is observed in such devices. Especially for the molecule with electron-donating group (-NH2), two NDR appear at different bias voltage regions, and the origins for both NDR behavior are different. A mechanism is proposed for the NDR behavior. (c) 2008 American Institute of Physics.
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000256934900103
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/65055]
专题	中国科学院化学研究所
通讯作者	Chen, Ke-Qiu
作者单位	1.Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China 2.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Long, Meng-Qiu,Chen, Ke-Qiu,Wang, Lingling,et al. Negative differential resistance behaviors in porphyrin molecular junctions modulated with side groups[J]. APPLIED PHYSICS LETTERS,2008,92(24).
APA	Long, Meng-Qiu,Chen, Ke-Qiu,Wang, Lingling,Qing, Wan,Zou, B. S.,&Shuai, Z..(2008).Negative differential resistance behaviors in porphyrin molecular junctions modulated with side groups.APPLIED PHYSICS LETTERS,92(24).
MLA	Long, Meng-Qiu,et al."Negative differential resistance behaviors in porphyrin molecular junctions modulated with side groups".APPLIED PHYSICS LETTERS 92.24(2008).