Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors

doi:10.1002/adfm.201200316

CORC > 化学研究所 > 中国科学院化学研究所

	Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors
	Xu, Xinjun 1; Liu, Bo 2; Zou, Yingping 2; Guo, Yunlong 3; Li, Lidong 1; Liu, Yunqi 3
刊名	ADVANCED FUNCTIONAL MATERIALS
	2012-10-10
卷号	22 期号:19 页码:4139-4148
关键词	Conjugated Polymers Dielectrics Organozinc Compounds Organic Field-effect Transistors Surface Modification
ISSN号	1616-301X
DOI	10.1002/adfm.201200316
英文摘要	The interface between the organic semiconductor and dielectric plays an important role in determining the device performance of organic field-effect transistors (OFETs). Although self-assembled monolayers (SAMs) made from organosilanes have been widely used for dielectric modification to improve the device performance of OFETs, they suffer from incontinuous and lack uniform coverage of the dielectric layer. Here, it is reported that by introduction of a solution-processed organozinc compound as a dielectric modification layer between the dielectric and the silane SAM, improved surface morphology and reduced surface polarity can be achieved. The organozinc compound originates from the reaction between diethylzinc and the cyclohexanone solvent, which leads to formation of zinc carboxylates. Being annealed at different temperatures, organozinc compound exists in various forms in the solid films. With organozinc modification, p-type polymer FETs show a high charge carrier mobility that is about two-fold larger than a control device that does not contain the organozinc compound, both for devices with a positive threshold voltage and for those with a negative one. After organozinc compound modification, the threshold voltage of polymer FETs can either be altered to approach zero or remain unchanged depending on positive or negative threshold voltage they have.
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000309404000020
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/48305]
专题	中国科学院化学研究所
通讯作者	Xu, Xinjun
作者单位	1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China 2.Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Peoples R China 3.Chinese Acad Sci, Inst Chem, Natl Lab Mol Sci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Xu, Xinjun,Liu, Bo,Zou, Yingping,et al. Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors[J]. ADVANCED FUNCTIONAL MATERIALS,2012,22(19):4139-4148.
APA	Xu, Xinjun,Liu, Bo,Zou, Yingping,Guo, Yunlong,Li, Lidong,&Liu, Yunqi.(2012).Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors.ADVANCED FUNCTIONAL MATERIALS,22(19),4139-4148.
MLA	Xu, Xinjun,et al."Organozinc Compounds as Effective Dielectric Modification Layers for Polymer Field-Effect Transistors".ADVANCED FUNCTIONAL MATERIALS 22.19(2012):4139-4148.