Band Engineering via Sn-doping of Zinc Oxide Electron Transport Materials for Perovskite Solar Cells

doi:10.1002/slct.201702419

CORC > 化学研究所 > 中国科学院化学研究所

	Band Engineering via Sn-doping of Zinc Oxide Electron Transport Materials for Perovskite Solar Cells
	Su, Tongyu 1,2,3; Zheng, Yuanhui 4; Ma, Zongwei 1; Cheng, Long 1; Xu, Xueli 1; Zhang, Fapei 1; Yu, Gui 4; Sheng, Zhigao 1,3,5
刊名	CHEMISTRYSELECT
	2018-01-17
卷号	3 期号:2 页码:363-367
关键词	Band Engineering Electron Transport Materials Perovskite Solar Cells Sn-doping Work Function
ISSN号	2365-6549
DOI	10.1002/slct.201702419
英文摘要	The performance of planar perovskite solar cells (PSCs) is quite dependent on the interfacial conditions and then the interfacial band engineering is very important not only for the effective improvement of power conversion efficiency (PCE) but also for the better understanding of the charge transfer in the cells. In this report, the band engineering of the ZnO based electron transport layer (ETL) in PSCs was studied by modulating Sn-doping level (0 x 0.2). A V-like variation of work function (W-f) as function of Sn-doping level in Zn1-xSnxO1+x films was realized from 4.23 to 4.39eV. As a result, the photovoltaic performance of PSCs with the Zn1-xSnxO1+x ETLs was adjusted and the V-like tendencies of photovoltaic parameters of devices, such as open-circuit voltage (V-OC) and the short-circuit current (J(SC)), were found. The maximum values of V-OC and J(SC) were achieved as 1.04V and 20.68mA cm(-2) with an ETL of Zn1-xSnxO1+x, respectively, which corresponds to a highest PCE of 14.12% for ZnO-based pervoskite solar cells with a large fill factor of 65.62.
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000422674700005
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/45377]
专题	中国科学院化学研究所
通讯作者	Zhang, Fapei; Sheng, Zhigao
作者单位	1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China 3.Nanjing Univ, Inst Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 4.Chinese Acad Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China 5.Chinese Acad Sci, Key Lab Photovolta & Energy Conversat, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Su, Tongyu,Zheng, Yuanhui,Ma, Zongwei,et al. Band Engineering via Sn-doping of Zinc Oxide Electron Transport Materials for Perovskite Solar Cells[J]. CHEMISTRYSELECT,2018,3(2):363-367.
APA	Su, Tongyu.,Zheng, Yuanhui.,Ma, Zongwei.,Cheng, Long.,Xu, Xueli.,...&Sheng, Zhigao.(2018).Band Engineering via Sn-doping of Zinc Oxide Electron Transport Materials for Perovskite Solar Cells.CHEMISTRYSELECT,3(2),363-367.
MLA	Su, Tongyu,et al."Band Engineering via Sn-doping of Zinc Oxide Electron Transport Materials for Perovskite Solar Cells".CHEMISTRYSELECT 3.2(2018):363-367.