Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations

doi:10.1038/s41598-018-36068-x

	Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
	Mao, Yuliang 1; Mao, Xin 1; Zhao, Hongquan2 ; Zhang, Nandi 1; Shi, Xuan2 ; Yuan, Jianmei 3
刊名	SCIENTIFIC REPORTS
	2018-12-05
卷号	8 页码:9
ISSN号	2045-2322
DOI	10.1038/s41598-018-36068-x
通讯作者	Mao, Yuliang(ylmao@xtu.edu.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要	The effect of thermal treatment and annealing under different temperatures from 100 degrees C to 250 degrees C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 degrees C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by similar to 84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement.
资助项目	National Natural Science Foundation of China[11471280] ; National Natural Science Foundation of China[11374251] ; National Natural Science Foundation of China[61775214] ; National Natural Science Foundation of China[61601433] ; Research Foundation of Education Bureau of Hunan Province, China[16A207] ; Research Foundation of Education Bureau of Hunan Province, China[17A207] ; Program for Changjiang Scholars and Innovative Research Team in University[IRT13093] ; CAS Light of West China programs
WOS研究方向	Science & Technology - Other Topics
语种	英语
出版者	NATURE PUBLISHING GROUP
WOS记录号	WOS:000452205300022
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/7203]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Mao, Yuliang; Zhao, Hongquan
作者单位	1.Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R China 3.Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Mao, Yuliang,Mao, Xin,Zhao, Hongquan,et al. Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations[J]. SCIENTIFIC REPORTS,2018,8:9.
APA	Mao, Yuliang,Mao, Xin,Zhao, Hongquan,Zhang, Nandi,Shi, Xuan,&Yuan, Jianmei.(2018).Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations.SCIENTIFIC REPORTS,8,9.
MLA	Mao, Yuliang,et al."Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations".SCIENTIFIC REPORTS 8(2018):9.