Superconducting titanium thin films are good candidates for transition edge sensors. In this paper, we deposit titanium thin films on cooled silicon-on-insulator substrates by using electron-beam evaporation. The deposition rate dependence of the film stress, resistivity, and superconducting transition temperature are presented and analyzed. The relationship between film electrical properties and thickness is discussed. For investigating the heating influence on thin Ti films, a depth profile of oxygen diffusion in the films is also analyzed by X-ray photoelectron spectroscopy.