Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111)

doi:10.1021/acsnano.5b05509

	Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111)
	Yang, Yang; Fu, Qiang; Li, Haobo; Wei, Mingming; Xiao, Jianping; Wei, Wei; Bao, Xinhe
刊名	ACS NANO
	2015-12-01
卷号	9 期号:12 页码:11589-11598
关键词	Hexagonal Boron Nitride Graphene Ni(111) Heterostructures Leem
ISSN号	1936-0851
DOI	10.1021/acsnano.5b05509
文献子类	Article
英文摘要	Heterostructures of two-dimensional (2D) atomic crystals have attracted increasing attention, while fabrication of the 2D stacking structures remains a challenge. In this work, we present a route toward formation of 20 heterostructures via confined growth of a 2D adlayer underneath the other 2D overlayer. Taking a hexagonal boron nitride (h-BN) monolayer on Ni(111) as a model system, both epitaxial and nonepitaxial h-BN islands have been identified on the Ni surface. Surface science studies combined with density functional theory calculations reveal that the nonepitaxial h-BN islands interact weakly with the Ni(111) surface, which creates a 20 nanospace underneath the h-BN islands. An additional h-BN or graphene layer can be grown in the space between the nonepitaxial h-BN islands and Ni(111) surface, forming h-BN/h-BN bilayer structures and h-BN/graphene heterostructures. These results suggest that confined growth under 2D covers may provide an effective route to obtain stacks of 2D atomic crystals.
WOS关键词	HEXAGONAL BORON-NITRIDE ; DER-WAALS EPITAXY ; CHEMICAL-VAPOR-DEPOSITION ; SCANNING-TUNNELING-MICROSCOPY ; METAL-CATALYZED REACTIONS ; HIGH-QUALITY GRAPHENE ; SURFACE-CHEMISTRY ; HETEROSTRUCTURES ; INTERFACES ; MONOLAYER
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000367280100009
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/171512]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Fu, Qiang
作者单位	Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
推荐引用方式 GB/T 7714	Yang, Yang,Fu, Qiang,Li, Haobo,et al. Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111)[J]. ACS NANO,2015,9(12):11589-11598.
APA	Yang, Yang.,Fu, Qiang.,Li, Haobo.,Wei, Mingming.,Xiao, Jianping.,...&Bao, Xinhe.(2015).Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111).ACS NANO,9(12),11589-11598.
MLA	Yang, Yang,et al."Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111)".ACS NANO 9.12(2015):11589-11598.