Computational understanding of the structural and electronic properties of the GeS-graphene contact
Zhao, Jinfeng2; Liang, Yan1; Chen, Hong1; Huang, Jindou3
刊名PHYSICAL CHEMISTRY CHEMICAL PHYSICS
2019-04-14
卷号21期号:14页码:7447-7453
ISSN号1463-9076
DOI10.1039/c9cp00374f
通讯作者Zhao, Jinfeng(jfzhao@dicp.ac.cn) ; Huang, Jindou(jindouhuang@dicp.ac.cn)
英文摘要Two-dimensional (2D) metal-semiconductor junctions have shown significant potential for nanoelectronic and optoelectronic applications. Herein, the structural and electronic properties of a germanium monosulfide/graphene (GeS/G) van der Waals (vdW) heterostructure were explored using first-principles calculations. It was discovered that the structural rigidity and mechanical anisotropy of GeS could be significantly improved by loading graphene. In addition, the intrinsic characteristics of the atomic layer GeS and graphene were well preserved, and the formation of a p-type Schottky contact in the equilibrium state was demonstrated; moreover, the Schottky barrier height of the interface was sensitive to the external condition and could be reduced to zero via applying normal strain or a perpendicular electric field. These insightful results pave the way for experimental research and the design of other 2D nanomaterial-based electronic and optoelectronic devices.
资助项目National Natural Science foundation of China[11604333]
WOS关键词BLACK PHOSPHORUS ; MONOLAYER ; FIELD ; MOS2 ; SEMICONDUCTOR ; SCHOTTKY ; HETEROSTRUCTURES ; STRAIN
WOS研究方向Chemistry ; Physics
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000464580600019
资助机构National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China
内容类型期刊论文
源URL[http://cas-ir.dicp.ac.cn/handle/321008/165552]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者Zhao, Jinfeng; Huang, Jindou
作者单位1.Shandong Univ, Sch Chem & Chem Engn, Sch Phys, Shandanan Str 27, Jinan 250100, Shandong, Peoples R China
2.Chinese Acad Sci, State Key Lab Mol React Dynam, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
3.Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China
推荐引用方式
GB/T 7714
Zhao, Jinfeng,Liang, Yan,Chen, Hong,et al. Computational understanding of the structural and electronic properties of the GeS-graphene contact[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2019,21(14):7447-7453.
APA Zhao, Jinfeng,Liang, Yan,Chen, Hong,&Huang, Jindou.(2019).Computational understanding of the structural and electronic properties of the GeS-graphene contact.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,21(14),7447-7453.
MLA Zhao, Jinfeng,et al."Computational understanding of the structural and electronic properties of the GeS-graphene contact".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 21.14(2019):7447-7453.
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