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	Extremely low density inas quantum dots realized in situ on (100) gaas
	Sun, J; Jin, P; Wang, ZG
刊名	Nanotechnology
	2004-12-01
卷号	15期号:12页码:1763-1766
ISSN号	0957-4484
DOI	10.1088/0957-4484/15/12/012
通讯作者	Sun, j(albertjefferson@sohu.com)
英文摘要	Extremely low density self-assembled inas quantum dots are grown by a combination technique of in situ annealing for 2 min and pause of substrate rotation during molecular beam epitaxy. the surface morphology and structural characteristics of the quantum dots are scrutinized by atomic force microscopy and photoluminescence spectra. it is found that the quantum dot size and density increase as the inas deposition amount rises. quantum dots with a density between 2.5 x 10(7) cm(-2) and 2.2 x 10(8) cm(-2) are 2-5 nm in height and 18-39 nm in diameter. it is believed that as-grown inas nanodots may be of important value for future single quantum dot research.
WOS关键词	EPITAXY ; GROWTH ; SIZE
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000225843200012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429450
专题	半导体研究所
通讯作者	Sun, J
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, J,Jin, P,Wang, ZG. Extremely low density inas quantum dots realized in situ on (100) gaas[J]. Nanotechnology,2004,15(12):1763-1766.
APA	Sun, J,Jin, P,&Wang, ZG.(2004).Extremely low density inas quantum dots realized in situ on (100) gaas.Nanotechnology,15(12),1763-1766.
MLA	Sun, J,et al."Extremely low density inas quantum dots realized in situ on (100) gaas".Nanotechnology 15.12(2004):1763-1766.

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