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	Ga1-xmnxsb grown on gasb substrate by liquid phase epitaxy
	Chen, CL; Chen, NF; Liu, LF; Li, YL; Wu, JL
刊名	Journal of crystal growth
	2004-01-02
卷号	260期号:1-2页码:50-53
关键词	X-ray diffraction Liquid phase epitaxy Semiconducting ternary compounds
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2003.08.022
通讯作者	Chen, cl()
英文摘要	The gal(1-x)mn(x)sb epilayer was prepared on the n-type gasb substrate by liquid phase epitaxy. the structure of the gal(1-x)mn(x)sb epilayer was analyzed by double-crystal x-ray diffraction. from the difference of the lattice constant between the gasb substrate and the ga1-xmnxsb epilayer, the mn content in the ga1-xmnxsb epilayer were calculated as x = 0.016. the elemental composition of ga1-xmnxsb epilayer was analyzed by energy dispersive spectrometer. the carrier concentration was obtained by hall measurement. the hole concentration in the ga1-xmnxsb epilayer is 4.06 x 10(19)cm(-3). it indicates that most of the mn atoms in ga1-xmnxsb take the site of ga, and play a role of acceptors. the current-voltage curve of the ga1-xmnxsb/gasb heterostructure was measured, and the rectifying effect is obvious. (c) 2003 elsevier b.v. all rights reserved.
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000187730000008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429387
专题	半导体研究所
通讯作者	Chen, CL
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Chen, CL,Chen, NF,Liu, LF,et al. Ga1-xmnxsb grown on gasb substrate by liquid phase epitaxy[J]. Journal of crystal growth,2004,260(1-2):50-53.
APA	Chen, CL,Chen, NF,Liu, LF,Li, YL,&Wu, JL.(2004).Ga1-xmnxsb grown on gasb substrate by liquid phase epitaxy.Journal of crystal growth,260(1-2),50-53.
MLA	Chen, CL,et al."Ga1-xmnxsb grown on gasb substrate by liquid phase epitaxy".Journal of crystal growth 260.1-2(2004):50-53.

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