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	Effects of seed dot layer and thin gaas spacer layer on the structure and optical properties of upper in(ga)as quantum dots
	He, J; Zhang, YC; Xu, B; Wang, ZG
刊名	Journal of applied physics
	2003-06-01
卷号	93期号:11页码:8898-8902
ISSN号	0021-8979
DOI	10.1063/1.1570503
通讯作者	He, j()
英文摘要	The structure and optical properties of in(ga)as with the introduction of ingaalas or inalas seed dot layers are investigated. the area density and size homogeneity of the upper ingaas dots are efficiently improved by the introduction of a buried layer of high-density dots. our explanation for the realization of high density and size homogeneity dots is presented. when the gaas spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. by analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (c) 2003 american institute of physics.
WOS关键词	SCANNING-TUNNELING-MICROSCOPY ; GROWTH ; ISLANDS ; NM
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000183144300010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429298
专题	半导体研究所
通讯作者	He, J
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	He, J,Zhang, YC,Xu, B,et al. Effects of seed dot layer and thin gaas spacer layer on the structure and optical properties of upper in(ga)as quantum dots[J]. Journal of applied physics,2003,93(11):8898-8902.
APA	He, J,Zhang, YC,Xu, B,&Wang, ZG.(2003).Effects of seed dot layer and thin gaas spacer layer on the structure and optical properties of upper in(ga)as quantum dots.Journal of applied physics,93(11),8898-8902.
MLA	He, J,et al."Effects of seed dot layer and thin gaas spacer layer on the structure and optical properties of upper in(ga)as quantum dots".Journal of applied physics 93.11(2003):8898-8902.

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