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	The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing
	Zhang, ZY; Jin, P; Li, CM; Ye, XL; Meng, XQ; Xu, B; Liu, FQ; Wang, ZG
刊名	Journal of crystal growth
	2003-06-01
卷号	253期号:1-4页码:59-63
关键词	Low dimensional structures Nanostructures Quantum dots Molecular beam epitaxy Semiconducting iii-v materials Laser diode
ISSN号	0022-0248
DOI	10.1016/s0022-0248(03)01014-5
通讯作者	Zhang, zy()
英文摘要	We have studied how the optical properties of inas self-assembled quantum dots (qds) grown on gaas substrate are affected when depositing an inalas/ingaas combination overgrowth layer directly on it by rapid thermal annealing (rta). the photoluminescence measurement demonstrated that the inas qds experiences an abnormal variation during the course of rta. the model of transformation of inas-inalas-ingaalas could be used to well explain the phenomena. (c) 2003 elsevier science b.v. all rights reserved.
WOS关键词	TIME-RESOLVED PHOTOLUMINESCENCE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000183223100009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429270
专题	半导体研究所
通讯作者	Zhang, ZY
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, ZY,Jin, P,Li, CM,et al. The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing[J]. Journal of crystal growth,2003,253(1-4):59-63.
APA	Zhang, ZY.,Jin, P.,Li, CM.,Ye, XL.,Meng, XQ.,...&Wang, ZG.(2003).The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing.Journal of crystal growth,253(1-4),59-63.
MLA	Zhang, ZY,et al."The evolution of inas/inalas/ingaalas quantum dots after rapid thermal annealing".Journal of crystal growth 253.1-4(2003):59-63.

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