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	Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition
	Qu, BZ; Zhu, QS; Sun, XH; Wan, SK; Wang, ZG; Nagai, H; Kawaguchi, Y; Hiramatsu, K; Sawaki, N
刊名	Journal of vacuum science & technology a
	2003-07-01
卷号	21期号:4页码:838-841
ISSN号	0734-2101
DOI	10.1116/1.1575214
通讯作者	Qu, bz()
英文摘要	Two mg-doped gan films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. photoluminescence (pl) experiments were carried out to investigate the optical properties of these films. for highly mg-doped gan, the pl spectra at 10 k are composed of a blue luminescence (bl) band at 2.857 ev and two excitonic luminescence lines at 3.342 ev and 3.282 ev, in addition to a l2 phonon replica at 3.212 ev. the intensity of the l1 line decreases monotonously with an increase,in temperature. however, the intensity of the l2 line first slowly increases at first, and then decreases quickly with an increase in temperature. the two lines are attributed to bound excitonic emissions at extended defects. the bl band is most likely due to the transition from deep donor mg-v-n complex to mg shallow acceptor. from the temperature dependence of the luminescence peak intensity of the bl band, the activation energy of acceptor mg was found to be 290 mev. (c) 2003 american vacuum society.
WOS关键词	P-TYPE GAN ; LIGHT-EMITTING-DIODES ; LOCALIZED EXCITONS ; GALLIUM NITRIDE ; FILMS ; DEFECTS ; LUMINESCENCE ; COMPENSATION ; SPECTROSCOPY ; ACCEPTORS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Coatings & Films ; Physics, Applied
语种	英语
出版者	A V S AMER INST PHYSICS
WOS记录号	WOS:000184409200003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429268
专题	半导体研究所
通讯作者	Qu, BZ
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 464, Japan 3.Mie Univ, Dept Elect Engn & Elect, Tsu, Mie 5148603, Japan
推荐引用方式 GB/T 7714	Qu, BZ,Zhu, QS,Sun, XH,et al. Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition[J]. Journal of vacuum science & technology a,2003,21(4):838-841.
APA	Qu, BZ.,Zhu, QS.,Sun, XH.,Wan, SK.,Wang, ZG.,...&Sawaki, N.(2003).Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition.Journal of vacuum science & technology a,21(4),838-841.
MLA	Qu, BZ,et al."Photoluminescence of mg-doped gan grown by metalorganic chemical vapor deposition".Journal of vacuum science & technology a 21.4(2003):838-841.

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