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	Design of high brightness cubic-gan leds grown on gaas substrate
	Sun, YP; Shen, XM; Zhang, ZH; Zhao, DG; Feng, ZH; Fu, Y; Zhang, SN; Yang, H
刊名	Journal of the korean physical society
	2003-02-01
卷号	42页码:S753-s756
关键词	Wafer bunding Cubic gan
ISSN号	0374-4884
通讯作者	Sun, yp()
英文摘要	The principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of gan/gaas optical devices by wafer-bonding technique. the calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown gan/gaas samples when a thin ni layer was used as adhesive layer and ag layer as reflective layer. full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
WOS关键词	LIGHT-EMITTING-DIODES ; FIELD-EFFECT TRANSISTOR ; SINGLE-CRYSTAL GAN ; MICROWAVE PERFORMANCE ; MIRROR ; JUNCTION
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	KOREAN PHYSICAL SOC
WOS记录号	WOS:000181337500148
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429258
专题	半导体研究所
通讯作者	Sun, YP
作者单位	Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, YP,Shen, XM,Zhang, ZH,et al. Design of high brightness cubic-gan leds grown on gaas substrate[J]. Journal of the korean physical society,2003,42:S753-s756.
APA	Sun, YP.,Shen, XM.,Zhang, ZH.,Zhao, DG.,Feng, ZH.,...&Yang, H.(2003).Design of high brightness cubic-gan leds grown on gaas substrate.Journal of the korean physical society,42,S753-s756.
MLA	Sun, YP,et al."Design of high brightness cubic-gan leds grown on gaas substrate".Journal of the korean physical society 42(2003):S753-s756.

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