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	Thermal annealing behaviour of ni/au on n-gan schottky contacts
	Sun, YP; Shen, XM; Wang, J; Zhao, DG; Feng, G; Fu, Y; Zhang, SM; Zhang, ZH; Feng, ZH; Bai, YX
刊名	Journal of physics d-applied physics
	2002-10-21
卷号	35期号:20页码:2648-2651
ISSN号	0022-3727
通讯作者	Sun, yp()
英文摘要	The schottky behaviour of ni/au contact on n-gan was investigated under various annealing conditions by current-voltage (i-v) measurements. a non-linear fitting method was used to extract the contact parameters from the i-v characteristic curves. experimental results indicate that high quality schottky contact with a barrier height and ideality factor of 0.86 +/- 0.02 ev and 1.19 +/- 0.02 ev, respectively, can be obtained under 5 min annealing at 600degreesc in n-2 ambience.
WOS关键词	RESISTANCE OHMIC CONTACTS ; FIELD-EFFECT TRANSISTOR ; SINGLE-CRYSTAL GAN ; MICROWAVE PERFORMANCE ; STABILITY ; BARRIER ; DIODES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000179131600030
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429226
专题	半导体研究所
通讯作者	Sun, YP
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, YP,Shen, XM,Wang, J,et al. Thermal annealing behaviour of ni/au on n-gan schottky contacts[J]. Journal of physics d-applied physics,2002,35(20):2648-2651.
APA	Sun, YP.,Shen, XM.,Wang, J.,Zhao, DG.,Feng, G.,...&Yang, H.(2002).Thermal annealing behaviour of ni/au on n-gan schottky contacts.Journal of physics d-applied physics,35(20),2648-2651.
MLA	Sun, YP,et al."Thermal annealing behaviour of ni/au on n-gan schottky contacts".Journal of physics d-applied physics 35.20(2002):2648-2651.

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