Creation and suppression of point defects through a kick-out substitution process of fe in inp | |
Zhao, YW; Dong, HW; Chen, YH; Zhang, YH; Jiao, JH; Zhao, JQ; Lin, LY; Fung, S | |
刊名 | Applied physics letters |
2002-04-22 | |
卷号 | 80期号:16页码:2878-2879 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.1473695 |
通讯作者 | Zhao, yw() |
英文摘要 | Indium antisite defect in-p-related photoluminescence has been observed in fe-diffused semi-insulating (si) inp. compared to annealed undoped or fe-predoped si inp, there are fewer defects in si inp obtained by long-duration, high-temperature fe diffusion. the suppression of the formation of point defects in fe-diffused si inp can be explained in terms of the complete occupation by fe at indium vacancy. the in-p defect is enhanced by the indium interstitial that is caused by the kick out of in and the substitution at the indium site of fe in the diffusion process. through these fe-diffusion results, the nature of the defects in annealed undoped si inp is better understood. (c) 2002 american institute of physics. |
WOS关键词 | SEMIINSULATING INP ; ZN DIFFUSION ; COMPLEXES ; PHOSPHIDE ; MECHANISM ; CRYSTALS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000175068900020 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2429205 |
专题 | 半导体研究所 |
通讯作者 | Zhao, YW |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao, YW,Dong, HW,Chen, YH,et al. Creation and suppression of point defects through a kick-out substitution process of fe in inp[J]. Applied physics letters,2002,80(16):2878-2879. |
APA | Zhao, YW.,Dong, HW.,Chen, YH.,Zhang, YH.,Jiao, JH.,...&Fung, S.(2002).Creation and suppression of point defects through a kick-out substitution process of fe in inp.Applied physics letters,80(16),2878-2879. |
MLA | Zhao, YW,et al."Creation and suppression of point defects through a kick-out substitution process of fe in inp".Applied physics letters 80.16(2002):2878-2879. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论