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	Rapid thermal annealing effects on step-graded inalas buffer layer and in0.52al0.48as/in0.53ga0.47as metamorphic high electron mobility transistor structures on gaas substrates
	Cui, LJ; Zeng, YP; Wang, BQ; Wu, J; Zhu, ZP; Lin, LY
刊名	Journal of applied physics
	2002-02-15
卷号	91期号:4页码:2429-2432
ISSN号	0021-8979
通讯作者	Cui, lj()
英文摘要	A step-graded inalas buffer layer and an in0.52al0.48as/in0.53ga0.47as metamorphic high electron mobility transistor (mm-hemt) structures were grown by molecular beam epitaxy on gaas (001) substrates, and rapid thermal annealing was performed on them in the temperature range 500-800 degreesc for 30 s. the as-grown and annealed samples were investigated with hall measurements, and 77 k photoluminescence. after rapid thermal annealing, the resistivities of step-graded inalas buffer layer structures became high. this can avoid leaky characteristics and parasitic capacitance for mm-hemt devices. the highest sheet carrier density n(s) and mobility mu for mm-hemt structures were achieved by annealing at 600 and 650degreesc, respectively. the relative intensities of the transitions between the second electron subband to the first heavy-hole subband and the first electron subband to the first heavy-hole subband in the mm-hemt ingaas well layer were compared under different annealing temperatures. (c) 2002 american institute of physics.
WOS关键词	HEMTS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000173553800104
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429140
专题	半导体研究所
通讯作者	Cui, LJ
作者单位	1.Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China 2.Acad Sinica, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
推荐引用方式 GB/T 7714	Cui, LJ,Zeng, YP,Wang, BQ,et al. Rapid thermal annealing effects on step-graded inalas buffer layer and in0.52al0.48as/in0.53ga0.47as metamorphic high electron mobility transistor structures on gaas substrates[J]. Journal of applied physics,2002,91(4):2429-2432.
APA	Cui, LJ,Zeng, YP,Wang, BQ,Wu, J,Zhu, ZP,&Lin, LY.(2002).Rapid thermal annealing effects on step-graded inalas buffer layer and in0.52al0.48as/in0.53ga0.47as metamorphic high electron mobility transistor structures on gaas substrates.Journal of applied physics,91(4),2429-2432.
MLA	Cui, LJ,et al."Rapid thermal annealing effects on step-graded inalas buffer layer and in0.52al0.48as/in0.53ga0.47as metamorphic high electron mobility transistor structures on gaas substrates".Journal of applied physics 91.4(2002):2429-2432.

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