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	Influences of initial nitridation process on the optical and structural characterization of gan layer grown on sapphire (0001) by metalorganic chemical vapor deposition
	Sun, XL; Yang, H; Zhu, JJ; Wang, YT; Chen, Y; Li, GH; Wang, ZG
刊名	Physica status solidi a-applied research
	2001-11-23
卷号	188期号:2页码:653-657
ISSN号	0031-8965
通讯作者	Sun, xl()
英文摘要	In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in gan films. two gan samples with and without 3 min nitridation process were investigated by photoluminescence (pl) spectroscopy in the temperature range of 12-300 k and double-crystal x-ray diffraction (xrd). in the 12 k pl spectra of the gan sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 ev were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. in the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 ev were observed at 12 k, no peak related to stacking faults. xrd results at different reflections showed that there are more stacking faults in the samples without nitridation.
WOS关键词	GALLIUM NITRIDE ; LUMINESCENCE ; BULK
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000172779700038
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429061
专题	半导体研究所
通讯作者	Sun, XL
作者单位	1.CAS, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.CAS, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.CAS, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, XL,Yang, H,Zhu, JJ,et al. Influences of initial nitridation process on the optical and structural characterization of gan layer grown on sapphire (0001) by metalorganic chemical vapor deposition[J]. Physica status solidi a-applied research,2001,188(2):653-657.
APA	Sun, XL.,Yang, H.,Zhu, JJ.,Wang, YT.,Chen, Y.,...&Wang, ZG.(2001).Influences of initial nitridation process on the optical and structural characterization of gan layer grown on sapphire (0001) by metalorganic chemical vapor deposition.Physica status solidi a-applied research,188(2),653-657.
MLA	Sun, XL,et al."Influences of initial nitridation process on the optical and structural characterization of gan layer grown on sapphire (0001) by metalorganic chemical vapor deposition".Physica status solidi a-applied research 188.2(2001):653-657.

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