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	Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped gaas/alxga1-xas single quantum wells at high magnetic-fields
	Wang, YJ; Leem, YA; McCombe, BD; Wu, XG; Peeters, FM; Jones, ED; Reno, JR; Lee, XY; Jiang, HW
刊名	Physical review b
	2001-10-15
卷号	64期号:16页码:4
ISSN号	1098-0121
通讯作者	Wang, yj()
英文摘要	Electron cyclotron resonance cr) measurements have been carried out in magnetic fields up to 32 t to study electron-phonon interaction in two heavily modulation-delta -doped gaas/al0.3ga0.7as single-quantum-well samples. no measurable resonant magnetopolaron effects were observed in either sample in the region of the gaas longitudinal optical (lo) phonons. however, when the cr frequency is above lo phonon frequency, omega (lo)=e-lo/(h) over bar, at high magnetic fields (b>27 t), electron cr exhibits a strong avoided-level-crossing splitting for both samples at frequencies close to (omega (lo)+ (e-2-e-1)1 (h) over bar, where e-2, and e-1 are the energies of the bottoms of the second and the first subbands, respectively. the energy separation between the two branches is large with the minimum separation of 40 cm(-1) occurring at around 30.5 t. a detailed theoretical analysis, which includes a self-consistent calculation of the band structure and the effects of electron-phonon interaction on the cr, shows that this type of splitting is due to a three-level resonance between the second landau level of the first electron subband and the lowest landau level of the second subband plus one gaas lo phonon. the absence of occupation effects in the final states and weak screening or this three-level process yields large energy separation even in the presence of high electron densities. excellent agreement between the theory and the experimental results is obtained.
WOS关键词	POLARON-CYCLOTRON-RESONANCE ; GAAS-ALAS SUPERLATTICES ; PHONON MODES ; HETEROSTRUCTURES
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000171866400009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429009
专题	半导体研究所
通讯作者	Wang, YJ
作者单位	1.Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA 2.SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 10083, Peoples R China 4.Univ Instelling Antwerp, Dept Phys, B-2610 Antwerp, Belgium 5.Sandia Natl Labs, Albuquerque, NM 87185 USA 6.Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA
推荐引用方式 GB/T 7714	Wang, YJ,Leem, YA,McCombe, BD,et al. Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped gaas/alxga1-xas single quantum wells at high magnetic-fields[J]. Physical review b,2001,64(16):4.
APA	Wang, YJ.,Leem, YA.,McCombe, BD.,Wu, XG.,Peeters, FM.,...&Jiang, HW.(2001).Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped gaas/alxga1-xas single quantum wells at high magnetic-fields.Physical review b,64(16),4.
MLA	Wang, YJ,et al."Strong three-level resonant magnetopolaron effect due to the intersubband coupling in heavily modulation-doped gaas/alxga1-xas single quantum wells at high magnetic-fields".Physical review b 64.16(2001):4.

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