QQ客服 官方微博 反馈留言

	Investigation of {111}a and {111} planes of c-gan epilayers grown on gaas(001) by mocvd
	Zheng, XH; Qu, B; Wang, YT; Feng, ZH; Han, JY; Yang, H; Liang, JW
刊名	Journal of crystal growth
	2001-11-01
卷号	233期号:1-2页码:52-56
关键词	X-ray diffraction Metalorganic chemical vapor deposition Gallium compounds
ISSN号	0022-0248
通讯作者	Zheng, xh()
英文摘要	A determination of {1 1 1}a and {1 1 1}b in cubic gan(c-gan) was investigated by x-ray diffraction technique in detail. the c-gan films are grown on gaas(0 0 1) substrates by metalorganic chemical vapor deposition(mocvd). the difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}a and {1 1 1}b planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}a and which is the {1 1 1}b planes. the lesser deviation between the ratios of /f-h k l/(2)//f-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal gan(h-gan) grown on c-gan{1 1 1}a planes is higher than that on {1 1 1}b planes. the reciprocal space mappings provide additional proof that the h-gan inclusions in c-gan films appear as lamellar structure. (c) 2001 published by elsevier science b.v.
WOS关键词	HEXAGONAL GAN ; CUBIC GAN ; GAAS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000170986400009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428990
专题	半导体研究所
通讯作者	Zheng, XH
作者单位	1.Chinese Acad Sci, Inst Semicond, R&D Ctr Optoelec Technol, Beijing 100083, Peoples R China 2.Chinese Acad Geol Sci, Inst Mineral & Resources, Beijing 100037, Peoples R China
推荐引用方式 GB/T 7714	Zheng, XH,Qu, B,Wang, YT,et al. Investigation of {111}a and {111} planes of c-gan epilayers grown on gaas(001) by mocvd[J]. Journal of crystal growth,2001,233(1-2):52-56.
APA	Zheng, XH.,Qu, B.,Wang, YT.,Feng, ZH.,Han, JY.,...&Liang, JW.(2001).Investigation of {111}a and {111} planes of c-gan epilayers grown on gaas(001) by mocvd.Journal of crystal growth,233(1-2),52-56.
MLA	Zheng, XH,et al."Investigation of {111}a and {111} planes of c-gan epilayers grown on gaas(001) by mocvd".Journal of crystal growth 233.1-2(2001):52-56.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。