Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate | |
Liu, BL; Liu, B; Xu, ZY; Ge, WK | |
刊名 | Journal of applied physics |
2001-11-15 | |
卷号 | 90期号:10页码:5111-5114 |
ISSN号 | 0021-8979 |
通讯作者 | Liu, bl() |
英文摘要 | Using time-resolved photoluminescence (pl) measurements, we have studied the exciton localization effect in ingaas/gaas quantum wire (qwr) structures formed in corrugated narrow ingaas/gaas quantum wells (qws) grown on (553)b gaas substrate. the pl decay time in the qwr structure was found to be independent of the temperature for t < 70 k, showing a typical dynamical behavior of the localized excitons. this result is in striking contrast to the corresponding quantum well structures, where a linear increase of the pl decay time was observed. in addition, an increase of the exciton lifetime was observed at low temperature for the qwr structure as compared to a reference ingaas/gaas quantum well sample (1200 vs 400 ps). the observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the qwr-like structure. in pl measurements, a significant polarization anisotropy was also found in our narrow ingaas/gaas qws grown on (553)b gaas. (c) 2001 american institute of physics. |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; CORRUGATED GAAS/ALAS SUPERLATTICES ; RADIATIVE LIFETIMES ; WELLS ; RECOMBINATION ; SURFACES ; DEPENDENCE ; DOTS |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000171918700034 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428981 |
专题 | 半导体研究所 |
通讯作者 | Liu, BL |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, BL,Liu, B,Xu, ZY,et al. Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate[J]. Journal of applied physics,2001,90(10):5111-5114. |
APA | Liu, BL,Liu, B,Xu, ZY,&Ge, WK.(2001).Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate.Journal of applied physics,90(10),5111-5114. |
MLA | Liu, BL,et al."Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate".Journal of applied physics 90.10(2001):5111-5114. |
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