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Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate
Liu, BL; Liu, B; Xu, ZY; Ge, WK
刊名Journal of applied physics
2001-11-15
卷号90期号:10页码:5111-5114
ISSN号0021-8979
通讯作者Liu, bl()
英文摘要Using time-resolved photoluminescence (pl) measurements, we have studied the exciton localization effect in ingaas/gaas quantum wire (qwr) structures formed in corrugated narrow ingaas/gaas quantum wells (qws) grown on (553)b gaas substrate. the pl decay time in the qwr structure was found to be independent of the temperature for t < 70 k, showing a typical dynamical behavior of the localized excitons. this result is in striking contrast to the corresponding quantum well structures, where a linear increase of the pl decay time was observed. in addition, an increase of the exciton lifetime was observed at low temperature for the qwr structure as compared to a reference ingaas/gaas quantum well sample (1200 vs 400 ps). the observed longer decay time was attributed to the reduction in the spatial coherence of excitons in the qwr-like structure. in pl measurements, a significant polarization anisotropy was also found in our narrow ingaas/gaas qws grown on (553)b gaas. (c) 2001 american institute of physics.
WOS关键词MOLECULAR-BEAM EPITAXY ; CORRUGATED GAAS/ALAS SUPERLATTICES ; RADIATIVE LIFETIMES ; WELLS ; RECOMBINATION ; SURFACES ; DEPENDENCE ; DOTS
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000171918700034
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428981
专题半导体研究所
通讯作者Liu, BL
作者单位1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Liu, BL,Liu, B,Xu, ZY,et al. Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate[J]. Journal of applied physics,2001,90(10):5111-5114.
APA Liu, BL,Liu, B,Xu, ZY,&Ge, WK.(2001).Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate.Journal of applied physics,90(10),5111-5114.
MLA Liu, BL,et al."Exciton localization in in0.15ga0.85as/gaas quantum wire structures grown on (553)b-oriented gaas substrate".Journal of applied physics 90.10(2001):5111-5114.
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