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	Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism
	Qin, GG; Chen, Y; Ran, GZ; Zhang, BR; Wang, SH; Qin, G; Ma, ZC; Zong, WH; Ren, SF
刊名	Journal of physics-condensed matter
	2001-12-17
卷号	13期号:50页码:11751-11761
ISSN号	0953-8984
通讯作者	Qin, gg()
英文摘要	Sio2/si/sio2 nanometer double barriers (sssndb) with si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-si substrates using two-target alternative magnetron sputtering. electroluminescence (el) from the semitransparent au film/sssndb/p-si diodes and from a control diode without any si layer have been observed under forward bias. each el spectrum of all these diodes can be fitted by two gaussian bands with peak energies of 1.82 and 2.25 ev, and full widths at half maximum of 0.38 and 0.69 ev, respectively. it is found that the current, el peak wavelength and intensities of the two gaussian bands of the au/sssndb/p-si structure oscillate synchronously with increasing si layer thickness with a period corresponding to half a de broglie wavelength of the carriers. the experimental results strongly indicate that the el originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 ev in the sio2 barriers, rather than from the nanometer si well in the sssndb. the el mechanism is discussed in detail.
WOS关键词	P-SI ; PHOTOLUMINESCENCE
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000173436600039
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428980
专题	半导体研究所
通讯作者	Qin, GG
作者单位	1.Peking Univ, Dept Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Nanjing Univ, Dept Phys, Nanjing 210008, Peoples R China 4.HSRI, Natl Key Lab, ASIC, Shijiazhuang 050051, Peoples R China 5.Illinois State Univ, Dept Phys, Normal, IL 61790 USA
推荐引用方式 GB/T 7714	Qin, GG,Chen, Y,Ran, GZ,et al. Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism[J]. Journal of physics-condensed matter,2001,13(50):11751-11761.
APA	Qin, GG.,Chen, Y.,Ran, GZ.,Zhang, BR.,Wang, SH.,...&Ren, SF.(2001).Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism.Journal of physics-condensed matter,13(50),11751-11761.
MLA	Qin, GG,et al."Electroluminescence from au/(sio2/si/sio2) nanometer double barrier/p-si structures and its mechanism".Journal of physics-condensed matter 13.50(2001):11751-11761.

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