QQ客服 官方微博 反馈留言

	Inas self-assembled nanostructures grown on inp(001)
	Li, YF; Liu, FQ; Xu, B; Lin, F; Wu, J; Jiang, WH; Ding, D; Wang, ZG
刊名	Chinese physics
	2000-03-01
卷号	9期号:3页码:222-224
ISSN号	1009-1963
通讯作者	Li, yf()
英文摘要	The 6-period stacked layers of self-assembled inas quasi-quantum wires(qqwrs) and quantum dots(qds) embedded into inalas on inp(001) substrates have been prepared by solid molecular beam epitaxy. the structures are characterized by atomic force microscopy(afm) and transmission electron microscopy(tem). from afm we have observed for the first time that inas qqwrs and qds coexist, and we explained this phenomenon from the view of the energy related to the islands. cross-sectional tem shows that inas qqwrs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of inas qds on gaas substrate.
WOS关键词	MOLECULAR-BEAM EPITAXY ; QUANTUM DOTS ; ISLANDS ; GAAS ; THRESHOLD ; GAAS(100) ; SIZE ; INP
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	GORDON BREACH SCI PUBL LTD
WOS记录号	WOS:000086515300012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428949
专题	半导体研究所
通讯作者	Li, YF
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, YF,Liu, FQ,Xu, B,et al. Inas self-assembled nanostructures grown on inp(001)[J]. Chinese physics,2000,9(3):222-224.
APA	Li, YF.,Liu, FQ.,Xu, B.,Lin, F.,Wu, J.,...&Wang, ZG.(2000).Inas self-assembled nanostructures grown on inp(001).Chinese physics,9(3),222-224.
MLA	Li, YF,et al."Inas self-assembled nanostructures grown on inp(001)".Chinese physics 9.3(2000):222-224.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。