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	The fabrication of thick sio2 layer by anodization
	Ou, HY; Yang, QQ; Lei, HB; Wang, QM; Hu, XW
刊名	Optical materials
	2000-07-01
卷号	14期号:3页码:271-275
关键词	Thick sio2 layer Porous silicon Sio2/si waveguide device
ISSN号	0925-3467
通讯作者	Ou, hy()
英文摘要	Silicon-based silica waveguide (sio2/si) devices have huge applications in optical telecommunication. sio2 up to 25-mu m thick is necessary for some passive sio2/si waveguide devices. oxidizing porous silicon to obtain thick sio2 as cladding layer is presented. the experimental results of porous layer and oxidized porous layer formation were given. the relationship between cracking of sio2 and temperature varying rate was given experimentally. such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent sio2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词	WAVE-GUIDES ; SILICON
WOS研究方向	Materials Science ; Optics
WOS类目	Materials Science, Multidisciplinary ; Optics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000087292400018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428924
专题	半导体研究所
通讯作者	Ou, HY
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ou, HY,Yang, QQ,Lei, HB,et al. The fabrication of thick sio2 layer by anodization[J]. Optical materials,2000,14(3):271-275.
APA	Ou, HY,Yang, QQ,Lei, HB,Wang, QM,&Hu, XW.(2000).The fabrication of thick sio2 layer by anodization.Optical materials,14(3),271-275.
MLA	Ou, HY,et al."The fabrication of thick sio2 layer by anodization".Optical materials 14.3(2000):271-275.

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