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	A surface kinetics model for the growth of si1-xgex by uhv/cvd using sih4/ceh4
	Yu, Z; Li, DZ; Cheng, BW; Huang, CJ; Lei, ZL; Yu, JZ; Wang, QM; Liang, JW
刊名	Journal of crystal growth
	2000-09-01
卷号	218期号:2-4页码:245-249
关键词	Sige/si Epitaxial growth Surface reaction kinetics Uhv/cvd system
ISSN号	0022-0248
通讯作者	Yu, z()
英文摘要	The surface reaction mechanism of si1-xgex/si growth using sih4 and geh4 in uhv/cvd system was studied. the saturated adsorption and desorption of sih4 from si(1 0 0) surface was investigated with the help of tpd and rheed, and it was found that all the 4 hydrogen atoms of one sih4 molecule were adsorbed to the si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. the analysis of the reaction of geh4 was also done. a new surface reaction kinetic model on si1-xgex/si epitaxial growth under uhv conditions by sih4/geh4 was proposed based on these studies. the predictions of the model were verified by the experimental results. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词	CHEMICAL VAPOR-DEPOSITION ; ATOMIC-HYDROGEN ; ADSORPTION ; SI(100) ; SI2H6 ; SIH4 ; MECHANISMS ; DESORPTION ; PHASE ; FILMS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000089575200016
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428918
专题	半导体研究所
通讯作者	Yu, Z
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yu, Z,Li, DZ,Cheng, BW,et al. A surface kinetics model for the growth of si1-xgex by uhv/cvd using sih4/ceh4[J]. Journal of crystal growth,2000,218(2-4):245-249.
APA	Yu, Z.,Li, DZ.,Cheng, BW.,Huang, CJ.,Lei, ZL.,...&Liang, JW.(2000).A surface kinetics model for the growth of si1-xgex by uhv/cvd using sih4/ceh4.Journal of crystal growth,218(2-4),245-249.
MLA	Yu, Z,et al."A surface kinetics model for the growth of si1-xgex by uhv/cvd using sih4/ceh4".Journal of crystal growth 218.2-4(2000):245-249.

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