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	Quantum-confined stark effects of inas/gaas self-assembled quantum dot
	Li, SS; Xia, JB
刊名	Journal of applied physics
	2000-12-15
卷号	88期号:12页码:7171-7174
ISSN号	0021-8979
通讯作者	Li, ss()
英文摘要	Quantum-confined stark effects in inas/gaas self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. the electron and hole energy levels and optical transition energies are calculated in the presence of perpendicular and parallel electric field. in our calculation, the effect of finite offset, valence band mixing, and strain are all taken into account. the results show that the perpendicular electric field weakly affects the electron ground state and hole energy levels. the energy levels are affected strongly by the parallel electric field. for the electron, the energy difference between the ground state and the first excited state decreases as electric field increases. the optical transition energies have clear redshifts in electric field. the theoretical results agree well with the available experimental data. our calculated results are useful for the application of quantum dots to photoelectric devices. (c) 2000 american institute of physics. [s0021-8979(00)11001-7].
WOS关键词	EFFECTIVE-MASS THEORY ; GAAS ; PHOTOLUMINESCENCE ; ISLANDS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000165543900032
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428840
专题	半导体研究所
通讯作者	Li, SS
作者单位	Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, SS,Xia, JB. Quantum-confined stark effects of inas/gaas self-assembled quantum dot[J]. Journal of applied physics,2000,88(12):7171-7174.
APA	Li, SS,&Xia, JB.(2000).Quantum-confined stark effects of inas/gaas self-assembled quantum dot.Journal of applied physics,88(12),7171-7174.
MLA	Li, SS,et al."Quantum-confined stark effects of inas/gaas self-assembled quantum dot".Journal of applied physics 88.12(2000):7171-7174.

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