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	Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy
	Li, HX; Daniels-Race, T; Wang, ZG
刊名	Applied physics letters
	1999-03-08
卷号	74期号:10页码:1388-1390
ISSN号	0003-6951
通讯作者	Li, hx(hxli@ee.duke.edu)
英文摘要	Growth mode and strain relaxation of molecular-beam-epitaxy grown inas/inalas/inp (111)a system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. in direct contrast to the well-studied inas/gaas system, our experimental results show that the inas grown on inalas/inp (111)a follows the stranski-krastanov mode. both self-organized inas quantum dots and relaxed inas islands are formed depending on the inas coverage. intense luminescence signals from both the inas quantum dots and wetting layer are observed. the luminescence efficiency of (111)a samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on inp (111)a surfaces. (c) 1999 american institute of physics. [s0003-6951(99)01010-4].
WOS关键词	MICROSTRUCTURAL EVOLUTION ; ISLAND FORMATION ; INXGA1-XAS ; SI(100) ; GAAS ; GE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000079011500012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428753
专题	半导体研究所
通讯作者	Li, HX
作者单位	1.Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, HX,Daniels-Race, T,Wang, ZG. Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy[J]. Applied physics letters,1999,74(10):1388-1390.
APA	Li, HX,Daniels-Race, T,&Wang, ZG.(1999).Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy.Applied physics letters,74(10),1388-1390.
MLA	Li, HX,et al."Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy".Applied physics letters 74.10(1999):1388-1390.

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