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	Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped gaas/alas superlattice
	Wang, JM; Sun, BQ; Wang, XR; Wang, YQ; Ge, WL; Wang, HL
刊名	Applied physics letters
	1999-10-25
卷号	75期号:17页码:2620-2622
ISSN号	0003-6951
英文摘要	A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped gaas/alas superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. as the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. these results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (c) 1999 american institute of physics. [s0003-6951(99)04443-5].
WOS关键词	SEMICONDUCTOR SUPERLATTICES ; OSCILLATIONS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000083185900034
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428665
专题	半导体研究所
作者单位	1.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Peoples R China 2.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, JM,Sun, BQ,Wang, XR,et al. Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped gaas/alas superlattice[J]. Applied physics letters,1999,75(17):2620-2622.
APA	Wang, JM,Sun, BQ,Wang, XR,Wang, YQ,Ge, WL,&Wang, HL.(1999).Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped gaas/alas superlattice.Applied physics letters,75(17),2620-2622.
MLA	Wang, JM,et al."Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped gaas/alas superlattice".Applied physics letters 75.17(1999):2620-2622.

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