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	The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition
	Zhu, M; Han, Y; Wehrspohn, RB; Godet, C; Etemadi, R; Ballutaud, D
刊名	Journal of applied physics
	1998-05-15
卷号	83期号:10页码:5386-5393
ISSN号	0021-8979
通讯作者	Zhu, m()
英文摘要	In order to understand the radiative recombination mechanisms in silicon oxides, photoluminescence properties (pl) of h-rich amorphous silicon oxide thin films grown in a dual-plasma chemical vapor deposition reactor have been related to a number of stoichiometry and structure characterizations (x-ray photoelectron spectroscopy, vibrational spectroscopy, and gas evolution studies). the visible photoluminescence at room temperature from a-siox:h matrixes with different compositions, including different bonding environments for h atoms, has been studied in the as-deposited and annealed states up to 900 degrees c. three commonly reported pl bands centered around 1.7, 2.1, and 2.9 ev have been detected from the same type of a-siox:h material, only by varying the oxygen content (x = 1.35, 1.65, and 2). temperature quenching experiments are crucial to distinguish the 1.7 ev band, fully consistent with bandtail-to-bandtail recombination, from the radiative defect luminescence mechanisms attributed either to defects related to si-oh groups (2.9 ev) or to oxygen-vacancy defects (2.1 ev). in the latter case, a red-shift of the pl peak energy as a function of annealing temperature is probably attributed to some matrix-induced strain effect. (c) 1998 american institute of physics.
WOS关键词	POROUS SILICON ; SI ; LUMINESCENCE ; NANOSTRUCTURES ; GLASS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000073773600055
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428532
专题	半导体研究所
通讯作者	Zhu, M
作者单位	1.Univ Sci & Technol China, Dept Phys, Grad Sch, Beijing 100039, Peoples R China 2.Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Ecole Polytech, CNRS, Phys Mat Condensee Lab, F-91128 Palaiseau, France 4.Ecole Polytech, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France 5.CNRS, Phys Solides Bellevue Lab, F-92195 Meudon, France
推荐引用方式 GB/T 7714	Zhu, M,Han, Y,Wehrspohn, RB,et al. The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition[J]. Journal of applied physics,1998,83(10):5386-5393.
APA	Zhu, M,Han, Y,Wehrspohn, RB,Godet, C,Etemadi, R,&Ballutaud, D.(1998).The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition.Journal of applied physics,83(10),5386-5393.
MLA	Zhu, M,et al."The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition".Journal of applied physics 83.10(1998):5386-5393.

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