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	The third subband population in modulation-doped ingaas/inalas heterostructures
	Li, HX; Wang, ZG; Liang, JB; Xu, B; Wu, J; Gong, Q; Jiang, C; Liu, FQ; Zhou, W
刊名	Journal of applied physics
	1997-12-15
卷号	82期号:12页码:6107-6109
ISSN号	0021-8979
通讯作者	Li, hx()
英文摘要	We have observed the population of the third (n=3) two-dimensional electron subband of ingaas/ inalas modulation-doped structures with very dense sheet carrier density by means of fourier transform photoluminescence (pl). three well-resolved pl peaks centered at 0.737, 0.908, and 0.980 ev are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. the subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. thanks to the presence of the fermi cutoff, the population ratio of these three subbands can be estimated. temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (c) 1997 american institute of physics.
WOS关键词	MULTIPLE-QUANTUM WELLS ; PHOTOLUMINESCENCE SPECTROSCOPY ; TRANSISTOR STRUCTURES ; ELECTRON ; TEMPERATURE ; DENSITY
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000071043400033
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428512
专题	半导体研究所
通讯作者	Li, HX
作者单位	Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 10083, Peoples R China
推荐引用方式 GB/T 7714	Li, HX,Wang, ZG,Liang, JB,et al. The third subband population in modulation-doped ingaas/inalas heterostructures[J]. Journal of applied physics,1997,82(12):6107-6109.
APA	Li, HX.,Wang, ZG.,Liang, JB.,Xu, B.,Wu, J.,...&Zhou, W.(1997).The third subband population in modulation-doped ingaas/inalas heterostructures.Journal of applied physics,82(12),6107-6109.
MLA	Li, HX,et al."The third subband population in modulation-doped ingaas/inalas heterostructures".Journal of applied physics 82.12(1997):6107-6109.

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