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	Intermediate-band solar cells based on inas/gaas quantum dots
	Yang Xiao-Guang1; Yang Tao1; Wang Ke-Fan1; Gu Yong-Xian1; Ji Hai-Ming1; Xu Peng-Fei1; Ni Hai-Qiao2; Niu Zhi-Chuan2; Wang Xiao-Dong3; Chen Yan-Ling3
刊名	Chinese physics letters
	2011-03-01
卷号	28期号:3页码:3
ISSN号	0256-307X
DOI	10.1088/0256-307x/28/3/038401
通讯作者	Yang tao(tyang@semi.ac.cn)
英文摘要	We report the fabrication of intermediate-band solar cells (ibscs) based on quantum dots (qds), which consists of a standard p-i-n structure with multilayer stacks of inas/gaas qds in the i-layer. compared with conventional gaas single-junction solar cells, the ibscs based on inas/gaas qds show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. the results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000288120900059
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428439
专题	半导体研究所
通讯作者	Yang Tao
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yang Xiao-Guang,Yang Tao,Wang Ke-Fan,et al. Intermediate-band solar cells based on inas/gaas quantum dots[J]. Chinese physics letters,2011,28(3):3.
APA	Yang Xiao-Guang.,Yang Tao.,Wang Ke-Fan.,Gu Yong-Xian.,Ji Hai-Ming.,...&Wang Zhan-Guo.(2011).Intermediate-band solar cells based on inas/gaas quantum dots.Chinese physics letters,28(3),3.
MLA	Yang Xiao-Guang,et al."Intermediate-band solar cells based on inas/gaas quantum dots".Chinese physics letters 28.3(2011):3.

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