| Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching | |
| Wei, T. B.; Yang, J. K.; Hu, Q.; Duan, R. F.; Huo, Z. Q.; Wang, J. X.; Zeng, Y. P.; Wang, G. H.; Li, J. M. | |
| 刊名 | Journal of crystal growth
 |
| 2011 | |
| 卷号 | 314期号:1页码:141-145 |
| 关键词 | Cl Pl Stacking fault Hvpe Gan Nonpolar |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2010.11.155 |
| 通讯作者 | Wei, t. b.(tbwei@semi.ac.cn) |
| 英文摘要 | A comprehensive study of the morphology and luminescence characteristics of nonpolar m-plane gan etched in hot acids was presented. it was found that many four-sided pyramidal pits were distributed on the etched gan surface with the long side perpendicular to the [1 1 (2) over bar 0] direction, corresponding to the threading dislocations. when compared to the as-grown gan, dap emission intensity and its lo-phonon coupling phenomenon in the etched gan were greatly attenuated, whereas the intensity of bsf-related band almost kept constant due to its immunity to chemical etching. especially, a new psf-related emission at 332 ev emerged in cl spectra of etched gan. simultaneously, partial relaxation of compressive stress happened for the etched gan epilayer according to the red shift of nbe emission in photoluminescence (pl) and e-2(high) phonon peak in the raman spectra. contrary, the dap peak in etched gan was blueshifted, likely due to the reduced impurity level fluctuation by etching. in addition, the different behaviors were discussed for nbe and defect-related transitions in the etched gan, characterized by excitation power- and temperature-dependent pl (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; ACCEPTOR PAIR EMISSION ; PHASE EPITAXY ; GROWN GAN ; SEMICONDUCTORS ; SAPPHIRE ; FILMS ; NITRIDE |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000286853400028 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428329 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, T. B. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, T. B.,Yang, J. K.,Hu, Q.,et al. Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching[J]. Journal of crystal growth,2011,314(1):141-145. |
| APA | Wei, T. B..,Yang, J. K..,Hu, Q..,Duan, R. F..,Huo, Z. Q..,...&Li, J. M..(2011).Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching.Journal of crystal growth,314(1),141-145. |
| MLA | Wei, T. B.,et al."Defect-related emission characteristics of nonpolar m-plane gan revealed by selective etching".Journal of crystal growth 314.1(2011):141-145. |
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