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	Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy
	Yang, Xiaoguang1; Yang, Tao1; Wang, Kefan1; Ji, Haiming1; Ni, Haiqiao2; Niu, Zhichuan2; Wang, Zhanguo1
刊名	Semiconductor science and technology
	2011-07-07
卷号	26期号:7页码:5
ISSN号	0268-1242
DOI	10.1088/0268-1242/26/7/075010
通讯作者	Yang, xiaoguang()
英文摘要	In this paper we discuss the fabrication of high-density inas quantum dots (qds) on gaas (1 0 0) substrates by molecular beam epitaxy, via antimony surfactant-mediated growth. the structural and optical properties of the qds were studied as a function of the amount of antimony irradiation. it was found that with appropriate antimony irradiation, the dot density significantly increases while simultaneously restraining giant qds. however, when the irradiation is beyond a certain amount, the dot density inversely decreases significantly. moreover, temperature-dependent photoluminescence (t-pl) measurements reveal that antimony irradiation can cause a larger redshift of the pl peak wavelength at all temperatures, a faster decrease of integrated pl intensity below 100 k and a slower decrease of integrated pl intensity within 100-300 k as compared to measurements taken in the absence of antimony irradiation. it was also found that by increasing the amount of antimony irradiation, the samples' behavior is closer to that of conventional qds.
WOS关键词	HIGH-DENSITY ; TEMPERATURE-DEPENDENCE ; SELF-FORMATION ; LAYERS ; WELL ; MBE
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000289554400011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428292
专题	半导体研究所
通讯作者	Yang, Xiaoguang
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yang, Xiaoguang,Yang, Tao,Wang, Kefan,et al. Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy[J]. Semiconductor science and technology,2011,26(7):5.
APA	Yang, Xiaoguang.,Yang, Tao.,Wang, Kefan.,Ji, Haiming.,Ni, Haiqiao.,...&Wang, Zhanguo.(2011).Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy.Semiconductor science and technology,26(7),5.
MLA	Yang, Xiaoguang,et al."Effect of antimony irradiation on inas/sb:gaas quantum dots grown by molecular beam epitaxy".Semiconductor science and technology 26.7(2011):5.

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