QQ客服 官方微博 反馈留言

	Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
	Jiang, Xiang-Wei1; Li, Shu-Shen1; Xia, Jian-Bai1; Wang, Lin-Wang2
刊名	Journal of applied physics
	2011-03-01
卷号	109期号:5页码:10
ISSN号	0021-8979
DOI	10.1063/1.3556430
通讯作者	Jiang, xiang-wei(xwjiang@semi.ac.cn)
英文摘要	We present a new empirical pseudopotential (epm) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using periodic boundary conditions. to treat the nonequilibrium condition, instead of directly calculating the scattering states from the source and drain, we calculate the stationary states by the linear combination of bulk band method and then decompose the stationary wave function into source and drain injecting scattering states according to an approximated top of the barrier splitting (tbs) scheme based on physical insight of ballistic and tunneling transports. the decomposed electronic scattering states are then occupied according to the source/drain fermi-levels to yield the occupied electron density which is then used to solve the potential, forming a self-consistent loop. the tbs is tested in a one-dimensional effective mass model by comparing with the direct scattering state calculation results. it is also tested in a three-dimensional 22 nm double gate ultra-thin-body field-effect transistor study, by comparing the tbs-epm result with the nonequilibrium green's function tight-binding result. we expected the tbs scheme will work whenever the potential in the barrier region is smoother than the wave function oscillations and it does not have local minimum, thus there is no multiple scattering as in a resonant tunneling diode, and when a three-dimensional problem can be represented as a quasi-one-dimensional problem, e. g., in a variable separation approximation. using our approach, a million atom nonequilibrium nanostructure device can be simulated with epm on a single processor computer. (c) 2011 american institute of physics. [doi:10.1063/1.3556430]
WOS关键词	FIELD-EFFECT TRANSISTORS ; SEMICONDUCTOR-DEVICES ; SILICON DEVICES ; MONTE-CARLO ; MOSFETS ; NANOTRANSISTORS ; APPROXIMATION ; EQUATIONS ; DESIGN ; MODELS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000288387900109
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428282
专题	半导体研究所
通讯作者	Jiang, Xiang-Wei
作者单位	1.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 2.Univ Calif Berkeley, Lawrence Berkeley Lab, Computat Res Div, Berkeley, CA 94720 USA
推荐引用方式 GB/T 7714	Jiang, Xiang-Wei,Li, Shu-Shen,Xia, Jian-Bai,et al. Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation[J]. Journal of applied physics,2011,109(5):10.
APA	Jiang, Xiang-Wei,Li, Shu-Shen,Xia, Jian-Bai,&Wang, Lin-Wang.(2011).Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation.Journal of applied physics,109(5),10.
MLA	Jiang, Xiang-Wei,et al."Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation".Journal of applied physics 109.5(2011):10.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。