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Electrode-contact enhancement in silicon nanowire-array-textured solar cells
Chen, Chen1; Jia, Rui1; Li, Haofeng1; Meng, Yanlong1; Liu, Xinyu1; Ye, Tianchun1; Kasai, Seiya2; Tamotsu, Hashizume2; Wu, Nanjian3; Wang, Shanli4
刊名Applied physics letters
2011-04-04
卷号98期号:14页码:3
ISSN号0003-6951
DOI10.1063/1.3576924
通讯作者Jia, rui(jiarui@ime.ac.cn)
英文摘要In the case of the silicon (si) nanowire (nw)-array-textured solar cells, the electrode-contact enhancement has been achieved using a simple and convenient double-step diffusion process to form a highly doped n+ region at the tips of a si-nw array. the series resistance can be effectively reduced, leading to an increase in the short-circuit current density in the cell. we have studied the physical mechanism of the impact of an increase in doping level at the tips of a si-nw array on the electrode-contact property, which would benefit in realizing an improvement in cell performance in such a nanostructure solar cell. (c) 2011 american institute of physics. [doi:10.1063/1.3576924]
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000289297800069
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2428256
专题半导体研究所
通讯作者Jia, Rui
作者单位1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
2.Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 1000, Peoples R China
4.Chinese Acad Sci, Res Ctr Adv Solar Cells, Beijing 100029, Peoples R China
推荐引用方式
GB/T 7714
Chen, Chen,Jia, Rui,Li, Haofeng,et al. Electrode-contact enhancement in silicon nanowire-array-textured solar cells[J]. Applied physics letters,2011,98(14):3.
APA Chen, Chen.,Jia, Rui.,Li, Haofeng.,Meng, Yanlong.,Liu, Xinyu.,...&Chu, Junhao.(2011).Electrode-contact enhancement in silicon nanowire-array-textured solar cells.Applied physics letters,98(14),3.
MLA Chen, Chen,et al."Electrode-contact enhancement in silicon nanowire-array-textured solar cells".Applied physics letters 98.14(2011):3.
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