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	Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates
	Li, Tianfeng1,3; Chen, Yonghai1; Lei, Wen2; Zhou, Xiaolong1; Luo, Shuai1; Hu, Yongzheng1; Wang, Lijun1; Yang, Tao1; Wang, Zhanguo1
刊名	Nanoscale research letters
	2011-07-21
卷号	6页码:7
ISSN号	1931-7573
DOI	10.1186/1556-276x-6-463
通讯作者	Chen, yonghai()
英文摘要	Catalyst-free, vertical array of inas nanowires (nws) are grown on si (111) substrate using mocvd technique. the as- grown inas nws show a zinc- blende crystal structure along a < 111 > direction. it is found that both the density and length of inas nws decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst- free growth of inas nws is governed by the nucleation kinetics. the longitudinal optical and transverse optical (to) mode of inas nws present a phonon frequency slightly lower than those of inas bulk materials, which are speculated to be caused by the defects in the nws. a surface optical mode is also observed for the inas nws, which shifts to lower wave- numbers when the diameter of nws is decreased, in agreement with the theory prediction. the carrier concentration is extracted to be 2.25 x 10(17) cm(-3) from the raman line shape analysis. a splitting of to modes is also observed.
WOS关键词	RAMAN-SCATTERING ; SEMICONDUCTING NANOWIRES ; OPTOELECTRONIC DEVICES ; PHOSPHIDE NANOWIRES ; OPTICAL PHONONS ; SILICON ; CRYSTALS ; SPECTRA
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000296250300002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428229
专题	半导体研究所
通讯作者	Chen, Yonghai
作者单位	1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia 3.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
推荐引用方式 GB/T 7714	Li, Tianfeng,Chen, Yonghai,Lei, Wen,et al. Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates[J]. Nanoscale research letters,2011,6:7.
APA	Li, Tianfeng.,Chen, Yonghai.,Lei, Wen.,Zhou, Xiaolong.,Luo, Shuai.,...&Wang, Zhanguo.(2011).Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates.Nanoscale research letters,6,7.
MLA	Li, Tianfeng,et al."Effect of growth temperature on the morphology and phonon properties of inas nanowires on si substrates".Nanoscale research letters 6(2011):7.

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