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	Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in vo2 film near the metal-insulator transition region
	Li, W. W.1; Yu, Q.1; Liang, J. R.2,3; Jiang, K.1; Hu, Z. G.1; Liu, J.2,4; Chen, H. D.2; Chu, J. H.1
刊名	Applied physics letters
	2011-12-12
卷号	99期号:24页码:3
ISSN号	0003-6951
DOI	10.1063/1.3665626
通讯作者	Hu, z. g.(zghu@ee.ecnu.edu.cn)
英文摘要	Transmittance spectra of (011) vanadium dioxide (vo2) film have been studied in the temperature range of 45-80 degrees c. owing to increasing carrier concentration, the near-infrared extinction coefficient and optical conductivity around metal-insulator transition (mit) rapidly increase with the temperature. moreover, three electronic transitions can be uniquely assigned and show the hysteresis behavior near the mit region. it was found that the optical band gap decreases from 0.457 to 0.042 ev before the mit, then reduces to zero for the metal state. this confirms the fact that the a(1g) and e(g)(pi) bands are moved close and finally overlap with the temperature. (c) 2011 american institute of physics. [doi: 10.1063/1.3665626]
WOS关键词	VANADIUM DIOXIDE ; MOTT TRANSITION ; THIN-FILMS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000298254200019
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428220
专题	半导体研究所
通讯作者	Hu, Z. G.
作者单位	1.E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, W. W.,Yu, Q.,Liang, J. R.,et al. Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in vo2 film near the metal-insulator transition region[J]. Applied physics letters,2011,99(24):3.
APA	Li, W. W..,Yu, Q..,Liang, J. R..,Jiang, K..,Hu, Z. G..,...&Chu, J. H..(2011).Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in vo2 film near the metal-insulator transition region.Applied physics letters,99(24),3.
MLA	Li, W. W.,et al."Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in vo2 film near the metal-insulator transition region".Applied physics letters 99.24(2011):3.

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