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	Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets
	Deng Hui-Xiong1; Jiang Xiang-Wei1; Tang Li-Ming2
刊名	Chinese physics letters
	2010-05-01
卷号	27期号:5页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307x/27/5/057101
通讯作者	Deng hui-xiong(hxdeng@semi.ac.cn)
英文摘要	Using self-consistent calculations of million-atom schrodinger-poisson equations, we investigate the i-v characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (mosfet) based on a full 3-d quantum mechanical simulation under nonequilibtium condition. atomistic empirical pseudopotentials are used to describe the device hamiltonian and the underlying bulk band structure. we find that the ballistic transport dominates the i-v characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8ma/mu m when the channel length of mosfet scales down to 25 nm. the effects of tunnelling transport lower the threshold voltage v(t). the ballistic current based on fully 3-d quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of luo et al.
WOS关键词	SIMULATION ; TRANSISTORS ; LIMIT ; NM
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000277344700055
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428081
专题	半导体研究所
通讯作者	Deng Hui-Xiong
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Deng Hui-Xiong,Jiang Xiang-Wei,Tang Li-Ming. Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets[J]. Chinese physics letters,2010,27(5):4.
APA	Deng Hui-Xiong,Jiang Xiang-Wei,&Tang Li-Ming.(2010).Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets.Chinese physics letters,27(5),4.
MLA	Deng Hui-Xiong,et al."Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets".Chinese physics letters 27.5(2010):4.

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