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	Measurement of gan/ge(001) heterojunction valence band offset by x-ray photoelectron spectroscopy
	Guo Yan; Liu Xiang-Lin; Song Hua-Ping; Yang An-Li; Zheng Gao-Lin; Wei Hong-Yuan; Yang Shao-Yan; Zhu Qin-Sheng; Wang Zhan-Guo
刊名	Chinese physics letters
	2010-06-01
卷号	27期号:6页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307x/27/6/067302
通讯作者	Guo yan(guoyan@semi.ac.cn)
英文摘要	X-ray photoelectron spectroscopy has been used to measure the valence band offset (vbo) at the gan/ge heterostructure interface. the vbo is directly determined to be 1.13 +/- 0.19 ev, according to the relationship between the conduction band offset delta e-c and the valence band offset delta e-v : delta e-c = e-g(gan) - e-g(ge) - delta e-v, and taking the room-temperature band-gaps as 3.4 and 0.67 ev for gan and ge, respectively. the conduction band offset is deduced to be 1.6 +/- 0.19 ev, which indicates a type-i band alignment for gan/ge. accurate determination of the valence and conduction band offsets is important for the use of gan/ge based devices.
WOS关键词	GE ; GAAS ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000278803400050
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428043
专题	半导体研究所
通讯作者	Guo Yan
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Guo Yan,Liu Xiang-Lin,Song Hua-Ping,et al. Measurement of gan/ge(001) heterojunction valence band offset by x-ray photoelectron spectroscopy[J]. Chinese physics letters,2010,27(6):4.
APA	Guo Yan.,Liu Xiang-Lin.,Song Hua-Ping.,Yang An-Li.,Zheng Gao-Lin.,...&Wang Zhan-Guo.(2010).Measurement of gan/ge(001) heterojunction valence band offset by x-ray photoelectron spectroscopy.Chinese physics letters,27(6),4.
MLA	Guo Yan,et al."Measurement of gan/ge(001) heterojunction valence band offset by x-ray photoelectron spectroscopy".Chinese physics letters 27.6(2010):4.

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