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	Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates
	Xue, Chengshan; Wang, Ying; Zhuang, Huizhao; Wang, Zouping; Huang, Yinglong; Zhang, Dongdong; Cao, Yuping
刊名	Journal of alloys and compounds
	2009-09-18
卷号	484期号:1-2页码:33-35
关键词	Single crystal growth Chemical vapor deposition processes Nanomaterials
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2009.05.086
通讯作者	Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要	Gan nanowires were synthesized successfully through ammoniating ga2o3/nicl2 films deposited on the unpolished si substrate. x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscope (hrtem) and fourier transformed infrared spectra (ftir) are used to characterize the samples. the results demonstrate that the nanowires are single-crystal gan with hexagonal wurtzite structure. the growth mechanism of gan nanowires is also discussed. (c) 2009 elsevier b.v. all rights reserved.
WOS关键词	LIGHT-EMITTING-DIODES ; GALLIUM NITRIDE ; ABSORPTION ; NANORODS ; CARBON
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000271334900009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427784
专题	半导体研究所
通讯作者	Xue, Chengshan
作者单位	Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Xue, Chengshan,Wang, Ying,Zhuang, Huizhao,et al. Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates[J]. Journal of alloys and compounds,2009,484(1-2):33-35.
APA	Xue, Chengshan.,Wang, Ying.,Zhuang, Huizhao.,Wang, Zouping.,Huang, Yinglong.,...&Cao, Yuping.(2009).Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates.Journal of alloys and compounds,484(1-2),33-35.
MLA	Xue, Chengshan,et al."Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates".Journal of alloys and compounds 484.1-2(2009):33-35.

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