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	Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd
	Zhang Zeng1,2; Zhang Rong1,2; Xie Zi-Li1,2; Liu Bin1,2; Xiu Xiang-Qian1,2; Li Yi1,2; Fu De-Yi1,2; Lu Hai1,2; Chen Peng1,2; Han Ping1,2
刊名	Acta physica sinica
	2009-05-01
卷号	58期号:5页码:3416-3420
关键词	Inn Dislocation Carrier origination Localization
ISSN号	1000-3290
通讯作者	Zhang zeng()
英文摘要	Inn thin films with different thicknesses are grown by metal organic chemical vapor deposition, and the dislocations, electrical and optical properties are investigated. based on the model of mosaic crystal, by means of x-ray diffraction skew geometry scan, the edge dislocation densities of 4.2 x 10(10) cm(-2) and 6.3 x 10(10) cm(-2) are fitted, and the decrease of twist angle and dislocation density in thicker films are observed. the carrier concentrations of 9 x 10(18) cm(-3) and 1.2 x 10(18) cm(-3) are obtained by room temperature hall effect measurement. v-n is shown to be the origin of background carriers, and the dependence of concentration and mobility on film thickness is explained. by the analysis of s-shape temperature dependence of photoluminescence peak, the defects induced carrier localization is suggested be involved in the photoluminescence. taking both the localization and energy band shrinkage effect into account, the localization energies of 5.05 mev and 5.58 mev for samples of different thicknesses are calculated, and the decrease of the carrier localization effect in the thicker sample can be attributed to the reduction of defects.
WOS关键词	FUNDAMENTAL-BAND GAP ; TEMPERATURE-DEPENDENCE
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000266384200084
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427683
专题	半导体研究所
通讯作者	Zhang Zeng
作者单位	1.Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang Zeng,Zhang Rong,Xie Zi-Li,et al. Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd[J]. Acta physica sinica,2009,58(5):3416-3420.
APA	Zhang Zeng.,Zhang Rong.,Xie Zi-Li.,Liu Bin.,Xiu Xiang-Qian.,...&Wang Zhan-Guo.(2009).Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd.Acta physica sinica,58(5),3416-3420.
MLA	Zhang Zeng,et al."Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd".Acta physica sinica 58.5(2009):3416-3420.

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