Novel w-shaped and straight porous zno nanobelts | |
Zhuang Huizhao; Shen Jiabing; Xue Chengshan; Wang Dexiao; Zhang Xiaokai; Liu Hang | |
刊名 | Applied surface science |
2009-02-15 | |
卷号 | 255期号:9页码:4970-4973 |
关键词 | Zno nanomaterials Methods of crystal growth Growth from vapor |
ISSN号 | 0169-4332 |
DOI | 10.1016/j.apsusc.2008.12.045 |
通讯作者 | Zhuang huizhao(zhuanghuizhao@sdnu.edu.cn) |
英文摘要 | Novel w-shaped porous zno nanobelt with the periodical junction angles of about 1188 and straight porous zno nanobelt have been successfully synthesized. the w-shaped structure growth changes from [0001] to [01 (1) over bar1] periodically. the straight nanobelt grows along [0001] direction. both of the structures have smooth surfaces with high porous density. based on our x-ray diffraction (xrd), electron microscopy and photoluminescence (pl) spectrum study, the growth mechanism of the special zno nanostructures is discussed, emphasizing the effect of alteration of the reactant concentration for two different morphologies. (c) 2008 elsevier b. v. all rights reserved. |
WOS关键词 | GROWTH |
WOS研究方向 | Chemistry ; Materials Science ; Physics |
WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000263542700049 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427629 |
专题 | 半导体研究所 |
通讯作者 | Zhuang Huizhao |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Zhuang Huizhao,Shen Jiabing,Xue Chengshan,et al. Novel w-shaped and straight porous zno nanobelts[J]. Applied surface science,2009,255(9):4970-4973. |
APA | Zhuang Huizhao,Shen Jiabing,Xue Chengshan,Wang Dexiao,Zhang Xiaokai,&Liu Hang.(2009).Novel w-shaped and straight porous zno nanobelts.Applied surface science,255(9),4970-4973. |
MLA | Zhuang Huizhao,et al."Novel w-shaped and straight porous zno nanobelts".Applied surface science 255.9(2009):4970-4973. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论