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	Indium-induced effect on polarized electroluminescence from ingan/gan mqws light emitting diodes
	Ruan Jun1,2; Yu Tong-Jun1; Jia Chuan-Yu1; Tao Ren-Chun1; Wang Zhan-Guo2; Zhang Guo-Yi1
刊名	Chinese physics letters
	2009-08-01
卷号	26期号:8页码:4
ISSN号	0256-307X
通讯作者	Yu tong-jun(tongjun@pku.edu.cn)
英文摘要	Polarization-resolved edge-emitting electroluminescence (el) studies of ingan/gan mqws of wavelengths from near-uv (390 nm) to blue (468 nm) light-emitting diodes (leds) are performed. although the te mode is dominant in all the samples of ingan/gan mqw leds, an obvious difference of light polarization properties is found in the ingan/gan mqw leds with different wavelengths. the polarization degree decreases from 52.4% to 26.9% when light wavelength increases. analyses of band structures of ingan/gan quantum wells and luminescence properties of quantum dots imply that quantum-dot-like behavior is the dominant reason for the low luminescence polarization degree of blue leds, and the high luminescence polarization degree of uv leds mainly comes from qw confinement and the strain effect. therefore, indium induced carrier confinement (quantum-dot-like behavior) might play a major role in the polarization degree change of ingan/gan mqw leds from near violet to blue.
WOS关键词	QUANTUM-WELL LASERS ; OPTICAL GAIN ; EMISSION ; GAN ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; LUMINESCENCE ; SPECTRA ; ORIGIN ; ENERGY
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000268662800094
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427624
专题	半导体研究所
通讯作者	Yu Tong-Jun
作者单位	1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Ruan Jun,Yu Tong-Jun,Jia Chuan-Yu,et al. Indium-induced effect on polarized electroluminescence from ingan/gan mqws light emitting diodes[J]. Chinese physics letters,2009,26(8):4.
APA	Ruan Jun,Yu Tong-Jun,Jia Chuan-Yu,Tao Ren-Chun,Wang Zhan-Guo,&Zhang Guo-Yi.(2009).Indium-induced effect on polarized electroluminescence from ingan/gan mqws light emitting diodes.Chinese physics letters,26(8),4.
MLA	Ruan Jun,et al."Indium-induced effect on polarized electroluminescence from ingan/gan mqws light emitting diodes".Chinese physics letters 26.8(2009):4.

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