1310 nm gainnas triple quantum well laser with 13 ghz modulation bandwidth | |
Zhao, H.1,3; Haglund, A.1; Westburgh, P.1; Wang, S. M.1; Gustavsson, J. S.1; Sadeghi, M.2; Larsson, A.1 | |
刊名 | Electronics letters |
2009-03-26 | |
卷号 | 45期号:7页码:356-u23 |
ISSN号 | 0013-5194 |
DOI | 10.1049/el.2009.3657 |
通讯作者 | Zhao, h.(zhaoh@chalmers.se) |
英文摘要 | The emission wavelength of a gainnas quantum well (qw) laser was adjusted to 1310 nm, the zero dispersion wavelength of optical fibre, by an appropriate choice of qw composition and thickness and n concentration in the barriers. a triple qw design was employed to enable the use of a short cavity with a small photon lifetime while having sufficient differential gain for a large modulation bandwidth. high speed, ridge waveguide lasers fabricated from high quality material grown by molecular beam epitaxy exhibited a damped modulation response with a bandwidth of 13 ghz. |
WOS关键词 | THRESHOLD-CURRENT-DENSITY ; RANGE |
WOS研究方向 | Engineering |
WOS类目 | Engineering, Electrical & Electronic |
语种 | 英语 |
出版者 | INST ENGINEERING TECHNOLOGY-IET |
WOS记录号 | WOS:000265233800012 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427617 |
专题 | 半导体研究所 |
通讯作者 | Zhao, H. |
作者单位 | 1.Chalmers, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden 2.Chalmers, Dept Microtechnol & Nanosci, Nanofabricat Lab, SE-41296 Gothenburg, Sweden 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao, H.,Haglund, A.,Westburgh, P.,et al. 1310 nm gainnas triple quantum well laser with 13 ghz modulation bandwidth[J]. Electronics letters,2009,45(7):356-u23. |
APA | Zhao, H..,Haglund, A..,Westburgh, P..,Wang, S. M..,Gustavsson, J. S..,...&Larsson, A..(2009).1310 nm gainnas triple quantum well laser with 13 ghz modulation bandwidth.Electronics letters,45(7),356-u23. |
MLA | Zhao, H.,et al."1310 nm gainnas triple quantum well laser with 13 ghz modulation bandwidth".Electronics letters 45.7(2009):356-u23. |
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